Materials for near field transducers and near field transducers containing same

ABSTRACT

A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

PRIORITY

This application claims priority to U.S. Provisional Application Nos.61/838,405 entitled “NEAR FIELD TRANSDUCER MATERIALS” filed on Jun. 24,2013, 61/838,393 entitled “MATERIALS FOR NEAR FIELD TRANSDUCERS AND NEARFIELD TRANSDUCERS INCLUDING THE SAME” filed on Jun. 24, 2013, 61/897,303entitled “MATERIALS FOR NEAR FIELD TRANSDUCERS AND NEAR FIELDTRANSDUCERS INCLUDING THE SAME” filed on Oct. 30, 2013, 61/838,398entitled “NEAR FIELD TRANSDUCERS AND METHODS OF FORMING THE SAME” filedon Jun. 24, 2013, 61/838,626 entitled “NEAR FIELD TRANSDUCERS ANDMETHODS OF FORMING THE SAME” filed on Jun. 24, 2013, and 61/984,915entitled “METHODS OF FORMING NEAR FIELD TRANSDUCERS (NFTS) USING IONIMPLANTATION” filed on Apr. 28, 2014, the disclosure of which isincorporated herein by reference thereto.

SUMMARY

A device including a near field transducer, the near field transducerincluding gold (Au) and at least one other secondary atom, the at leastone other secondary atom selected from: boron (B), bismuth (Bi), indium(In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb),manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N),and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho),lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn),and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs),dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium(Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium(Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium(Th), and combinations thereof.

A device including a light source; a waveguide; and a near fieldtransducer, the near field transducer including gold (Au) and at leastone other secondary atom, the at least one other secondary atom selectedfrom: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si),tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb),tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), andcombinations thereof; erbium (Er), holmium (Ho), lutetium (Lu),praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), andcombinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs),dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium(Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium(Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium(Th), and combinations thereof, wherein the light source, waveguide andnear field transducer are configured to transmit light from the lightsource to the waveguide and finally the near field transducer.

A disc drive including at least one actuator arm having a first and asecond end; at least one head, wherein each arm has a head at the firstend thereof and wherein each head includes: a light source; a near fieldtransducer, the near field transducer including gold (Au) and at leastone other secondary atom, the at least one other secondary atom selectedfrom: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si),tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb),tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), andcombinations thereof; erbium (Er), holmium (Ho), lutetium (Lu),praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), andcombinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs),dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium(Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium(Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium(Th), and combinations thereof; a magnetic reader; and a magneticwriter, wherein the light source and the near field transducer areconfigured to transmit light from the light source to the near fieldtransducer in order to assist the magnetic writer with writing.

The above summary of the present disclosure is not intended to describeeach disclosed embodiment or every implementation of the presentdisclosure. The description that follows more particularly exemplifiesillustrative embodiments. In several places throughout the application,guidance is provided through lists of examples, which examples can beused in various combinations. In each instance, the recited list servesonly as a representative group and should not be interpreted as anexclusive list.

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a pictorial representation of a data storage device in theform of a disc drive that can include a recording head constructed inaccordance with an aspect of this disclosure.

FIG. 2 is a side elevation view of a recording head constructed inaccordance with an aspect of the invention.

FIG. 3 is a schematic representation of a near field transducer.

FIG. 4 is a schematic representation of another near field transducer.

FIG. 5 shows the total energies of the grain boundary with the boronatom in the bulk interstitial site and in the grain boundary hollow sitewith respect to expansion distances of the cell.

FIG. 6 shows a graph comparing the experimental T and C_(o) ranges withcalculated positions of T_(B) and T_(C) for Pb—In—Sn and Bi—In—Sn graingrowth.

FIG. 7 shows the relative atomic size difference versus the grainboundary segregation energy of various elements.

The figures are not necessarily to scale. Like numbers used in thefigures refer to like components. However, it will be understood thatthe use of a number to refer to a component in a given figure is notintended to limit the component in another figure labeled with the samenumber.

DETAILED DESCRIPTION

Heat assisted magnetic recording (referred to through as HAMR) utilizesradiation, for example from a laser, to heat media to a temperatureabove its curie temperature, enabling magnetic recording. In order todeliver the radiation, e.g., a laser beam, to a small area (on the orderof 20 to 50 nm for example) of the medium, a NFT is utilized. During amagnetic recording operation, the NFT absorbs energy from a laser andfocuses it to a very small area; this can cause the temperature of theNFT to increase. The temperature of the NFT can be elevated up to about400° C. or more.

The very high temperatures that the NFT reaches during operation canlead to diffusion of the material of the NFT (for example gold) from thepeg and towards the disk. In addition, a portion of the NFT may beexposed at the air bearing surface of the recording head and is thussubject to mechanical wearing. NFT performance is greatly influenced bythe heat and mechanical stress during HAMR operation. It would thereforebe advantageous to have NFT devices that are more durable.

Disclosed devices can offer the advantage of providing more efficienttransfer of energy from an energy source to the magnetic storage mediato be heated, a smaller focal point at the point of heating, or somecombination thereof. In some embodiments, disclosed devices can be usedwithin other devices or systems, such as magnetic recording heads, morespecifically, thermally or heat assisted magnetic recording (HAMR)heads, or disc drives that include such devices.

Disclosed herein are NFTs and devices that include such NFTs. FIG. 1 isa pictorial representation of a data storage device in the form of adisc drive 10 that can utilize disclosed NFTs. The disc drive 10includes a housing 12 (with the upper portion removed and the lowerportion visible in this view) sized and configured to contain thevarious components of the disc drive. The disc drive 10 includes aspindle motor 14 for rotating at least one magnetic storage media 16within the housing. At least one arm 18 is contained within the housing12, with each arm 18 having a first end 20 with a recording head orslider 22, and a second end 24 pivotally mounted on a shaft by a bearing26. An actuator motor 28 is located at the arm's second end 24 forpivoting the arm 18 to position the recording head 22 over a desiredsector or track 27 of the disc 16. The actuator motor 28 is regulated bya controller, which is not shown in this view and is well-known in theart. The storage media may include, for example, continuous media or bitpatterned media.

For heat assisted magnetic recording (HAMR), electromagnetic radiation,for example, visible, infrared or ultraviolet light is directed onto asurface of the data storage media to raise the temperature of alocalized area of the media to facilitate switching of the magnetizationof the area. Recent designs of HAMR recording heads include a thin filmwaveguide on a slider to guide light toward the storage media and a nearfield transducer to focus the light to a spot size smaller than thediffraction limit. While FIG. 1 shows a disc drive, disclosed NFTs canbe utilized in other devices that include a near field transducer.

FIG. 2 is a side elevation view of a recording head that may include adisclosed NFT; the recording head is positioned near a storage media.The recording head 30 includes a substrate 32, a base coat 34 on thesubstrate, a bottom pole 36 on the base coat, and a top pole 38 that ismagnetically coupled to the bottom pole through a yoke or pedestal 40. Awaveguide 42 is positioned between the top and bottom poles. Thewaveguide includes a core layer 44 and cladding layers 46 and 48 onopposite sides of the core layer. A mirror 50 is positioned adjacent toone of the cladding layers. The top pole is a two-piece pole thatincludes a first portion, or pole body 52, having a first end 54 that isspaced from the air bearing surface 56, and a second portion, or slopedpole piece 58, extending from the first portion and tilted in adirection toward the bottom pole. The second portion is structured toinclude an end adjacent to the air bearing surface 56 of the recordinghead, with the end being closer to the waveguide than the first portionof the top pole. A planar coil 60 also extends between the top andbottom poles and around the pedestal. In this example, the top poleserves as a write pole and the bottom pole serves as a return pole.

An insulating material 62 separates the coil turns. In one example, thesubstrate can be AlTiC, the core layer can be Ta₂O₅, and the claddinglayers (and other insulating layers) can be Al₂O₃. A top layer ofinsulating material 63 can be formed on the top pole. A heat sink 64 ispositioned adjacent to the sloped pole piece 58. The heat sink can becomprised of a non-magnetic material, such as for example Au.

As illustrated in FIG. 2, the recording head 30 includes a structure forheating the magnetic storage media 16 proximate to where the write pole58 applies the magnetic write field H to the storage media 16. In thisexample, the media 16 includes a substrate 68, a heat sink layer 70, amagnetic recording layer 72, and a protective layer 74. However, othertypes of media, such as bit patterned media can be used. A magneticfield H produced by current in the coil 60 is used to control thedirection of magnetization of bits 76 in the recording layer of themedia.

The storage media 16 is positioned adjacent to or under the recordinghead 30. The waveguide 42 conducts light from a source 78 ofelectromagnetic radiation, which may be, for example, ultraviolet,infrared, or visible light. The source may be, for example, a laserdiode, or other suitable laser light source for directing a light beam80 toward the waveguide 42. Specific exemplary types of light sources 78can include, for example laser diodes, light emitting diodes (LEDs),edge emitting laser diodes (EELs), vertical cavity surface emittinglasers (VCSELs), and surface emitting diodes. In some embodiments, thelight source can produce energy having a wavelength of 830 nm, forexample. Various techniques that are known for coupling the light beam80 into the waveguide 42 may be used. Once the light beam 80 is coupledinto the waveguide 42, the light propagates through the waveguide 42toward a truncated end of the waveguide 42 that is formed adjacent theair bearing surface (ABS) of the recording head 30. Light exits the endof the waveguide and heats a portion of the media, as the media movesrelative to the recording head as shown by arrow 82. A near-fieldtransducer (NFT) 84 is positioned in or adjacent to the waveguide and ator near the air bearing surface. The heat sink material may be chosensuch that it does not interfere with the resonance of the NFT.

Although the example of FIG. 2 shows a perpendicular magnetic recordinghead and a perpendicular magnetic storage media, it will be appreciatedthat the disclosure may also be used in conjunction with other types ofrecording heads and/or storage media where it may be desirable toconcentrate light to a small spot.

FIG. 3 is a schematic view of a lollypop NFT 90 in combination with aheat sink 92. The NFT includes a disk shaped portion 94 and a peg 96extending from the disk shaped portion. The heat sink 92 can bepositioned between the disk shaped portion and the sloped portion of thetop pole in FIG. 2. When mounted in a recording head, the peg may beexposed at the ABS and thus can be subjected to mechanical wearing.

FIG. 4 is a schematic view of a coupled nanorod (CNR) NFT 100. This NFTincludes two nanorods 102 and 104 separated by a gap 106. Nanorod 102includes a first portion 108 and a second portion 110. Nanorod 104includes a first portion 112 and a second portion 114. When mounted in arecording head, the ends 116 and 118 of the nanorods may be exposed atthe ABS and thus be subject to mechanical wearing. FIGS. 3 and 4 showexample NFTs. However, the disclosure is not limited to any particulartype of NFT. The materials described below may be used in various NFTconfigurations.

Disclosed NFTs may be made of a primary atom and at least one secondaryatom. In some embodiments, the primary atom may have a higher atomicpercentage (at %) in the NFT. In some embodiments, the primary atom maybe gold (Au). In some embodiments, more than one secondary atom isincluded in a NFT. A secondary atom(s) may be chosen by considering oneor more properties of a material, mechanisms of atomic diffusion, orcombinations thereof.

It is thought that, atoms, for example gold atoms diffuse throughdefects in the NFT. In solids, there are three kinds of defects: pointdefects (atoms missing, lattice vacancies, substitutional, interstitialimpurities, and self-interstitials); linear defects (screw and edgedislocations); and planar defects (large angle and small angle grainboundaries, stacking faults, and external surfaces). Each type of defectprovides its own mechanism for diffusion. As a result, there are threemajor mechanisms by which a NFT material (e.g., gold) may diffuse fromthe peg to the disk, namely, bulk or lattice diffusion, defectdiffusion, and surface diffusion.

Bulk or lattice diffusion generally involves vacancy-atom exchange. Itis by this process that the atoms in the layers intermingle so that thelatter become of increasingly similar composition while totally in thesolid state. Bulk diffusion is highly temperature dependent, and has arelatively small diffusion coefficient at temperatures below the meltingpoint of the material.

The second mechanism is that of rapid diffusion along defect paths. Thisprocess is less dependent on temperature than is lattice diffusion andusually becomes dominant at lower temperatures. Defects like grainboundaries, dislocations and twin boundaries, which are common andpractically unavoidable in metals, can serve as rapid transport pipesthrough a metallic layer.

The third mechanism is surface or interface diffusion. Due to themismatch, there are high density defects at the surface and/or interfacebetween the NFT and the surrounding CNS, NPS, and HOC. As a result, NFTatoms, e.g., gold atoms, have a relatively high diffusion coefficientthrough surface and/or interface diffusion.

Disclosed secondary atoms to combine with a primary atom may be chosen,at least in part, by keeping these diffusion mechanisms in mind. Variousproperties that may be considered then can include, for example bondenergy/strength of the secondary atoms to the primary atom in comparisonto the bond energy/strength of the primary atom to the primary atom,solubility of the secondary atom in the primary atom, size of the atomicradius, optical properties, oxidation resistance, melting point, or somecombination thereof.

In some embodiments, at least one of the secondary atoms has a higherbond energy/strength than does the primary atom—primary atom bond. Suchan atom may serve to reduce the primary material atom diffusion from thepeg to the disk and thereby increase peg reliability. By considering, asan example, gold as the primary atom, the following can explain theeffect of the bond energy/strength consideration. Gold has a facecentered cubic (fcc) structure. In a gold lattice, each gold atom isbonded to the atoms at the 6 corners and 12 atoms at the center of theface, which means that one gold atom is connected to 18 other goldatoms. Potentially, adding one other atom with a high bond strength withgold could therefore affect the movement of 18 gold atoms. Due to thelarger bond strength, it is expected that this atom will bond to thesurrounding gold atoms and form atom clusters. This could prevent theseparation of the gold atoms from the grain, which limits the source offree gold atoms. Also, the cluster could pin the defects, such asdislocations, small angle grain boundaries, and large angle grainboundary, which could obstruct movement of the defects, and therefore,hinder the gold diffusion. Furthermore, the unbound secondary atoms atthe interface, the grain boundary, the dislocation, and other defectscould attract the free gold atoms, which could further hindertransportation of the gold atoms through defect channels and therebyincrease the NFT stability.

The existence of the secondary atom(s) on the NFT surface and at theNFT/surrounding material interfaces could also block the primary atomdiffusion through surfaces and interfaces. Especially in circumstances,when the free primary atoms on the surface or at the interface diffuseaway, leaving a relatively high concentration of secondary atoms on thesurface or at the interface, which could prevent the further diffusionof the remaining primary atoms and increase the peg stability.

In some embodiments, the bond energy/strength of a secondary atom to theprimary atom in comparison to the bond energy/strength of the primaryatom to the primary atom may be relevant when considering elements toinclude as a secondary atom(s). Table 1 below shows bond dissociationenergies of different atoms with gold. The bond dissociation energy of abond indicates the bond energy/strength of a bond. The higher the bonddissociation energy, the stronger the bond is.

TABLE 1 Bond dissociation energy (kJ/mol) Bond Bond Energy Bond EnergyEnergy Bond (kJ/mol) Bond (kJ/mol) Bond (kJ/mol) Ag—Au 203 Al—Au 326Au—Au 224.7 Au—B 367.8 Au—Ba 254.8 Au—Be 285 Au—Bi 297 Au—Ca 243 Au—Ce339 Au—Cl 343 Au—Co 222 Au—Cr 213 Au—Cs 255 Au—Cu 228 Au-D 318 Au—Dy 259Au—Eu 241 Au—F 294 Au—Fe 187 Au—Ga 234 Au—Ge 274.1 Au—H 292 Au—Ho 267Au—I 276 Au—In 286 Au—La 336.4 Au—Li 284.5 Au—Lu 332 Au—Mg 243 Au—Mn185.4 Au—Na 215 Au—Nd 299.2 Au—Ni 255 Au—O 221.8 Au—Pb 130 Au—Pd 155Au—Pr 310 Au—Rb 243 Au—Rh 231 Au—S 418 Au—Sc 280 Au—Se 243 Au—Si 305.4Au—Sn 254.8 Au—Sr 264 Au—Tb 289 Au—Te 317.6 Au—U 318 Au—V 240.6 Au—W207.9 Au—Y 307.1

In some embodiments, the secondary atom can be boron (B), bismuth (Bi),indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn),tellurium (Te), or combinations thereof, for example. In someembodiments, the secondary atom can be holmium (Ho), lutetium (Lu),praseodymium (Pr), scandium (Sc), uranium (U), or combinations thereof,for example. In some embodiments, the secondary atom can be barium (Ba),chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine(F), germanium (Ge), hydrogen (H), iodine (I), rubidium (Rb), selenium(Se), terbium (Tb), or combinations thereof, for example. In someembodiments, the secondary atom can be boron (B), bismuth (Bi), indium(In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium(Te), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc),uranium (U), barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy),europium (Eu), fluorine (F), germanium (Ge), hydrogen (H), iodine (I),rubidium (Rb), selenium (Se), terbium (Tb), or combinations thereof, forexample.

In some embodiments, the solubility of the secondary atom in the primaryatom may be relevant when considering elements to include as a secondaryatom(s). If a secondary atom(s) has a relatively low solubility in theprimary atom, the secondary atom(s) will exist mainly in the defects ofthe structure of the primary atoms. This can serve to reduce thediffusion of the gold atoms through the defects. In some embodiments,the secondary atom can be boron (B), bismuth (Bi), sulfur (S), silicon(Si), carbon (C), antimony (Sb), tellurium (Te), or combinationsthereof, for example. In some embodiments, the secondary atom can beboron (B), bismuth (Bi), sulfur (S), silicon (Si), tellurium (Te), orcombinations thereof, for example. In some embodiments, the secondaryatom can be holmium (Ho), erbium (Er), lutetium (Lu), praseodymium (Pr),uranium (U), or combinations thereof, for example. In some embodiments,the secondary atom can be cesium (Cs), dysprosium (Dy), europium (Eu),gadolinium (Gd), germanium (Ge), rubidium (Rb), selenium (Se), samarium(Sm), terbium (Tb), thallium (Th), or combinations thereof, for example.In some embodiments, the secondary atom can be cesium (Cs), dysprosium(Dy), europium (Eu), germanium (Ge), rubidium (Rb), selenium (Se),terbium (Tb), or combinations thereof, for example. In some embodiments,the secondary atom can be boron (B), bismuth (Bi), sulfur (S), silicon(Si), carbon (C), antimony (Sb), tellurium (Te), holmium (Ho), lutetium(Lu), praseodymium (Pr), uranium (U), cesium (Cs), dysprosium (Ds),europium (Eu), gadolinium (Gd), germanium (Ge), rubidium (Rb), selenium(Se), samarium (Sm), terbium (Tb), thallium (Th), cadmium (Cd),neodymium (Nd), phosphorus (P), lead (Pb), or combinations thereof, forexample.

In some embodiments, atoms with high solubility in gold can haveadvantageous effects, while in some other embodiments, atoms with lowsolubility in gold can have advantageous effects. In some embodiments,only insoluble atoms can be added to a primary material so that theatoms stay in the defects. In some embodiment, only soluble atoms can beadded to a primary material in order to increase the thermal stabilityof the primary material. In some embodiments, both soluble and insolubleatoms can be added to a primary material in order to increase thethermal stability of the primary material. In some embodiments, acombination of atoms with low solubility and atoms with high solubilitymay have an advantageous effect of improving the thermal stability of aprimary material.

In some embodiments at least two secondary atoms can be included with aprimary atom to form a NFT. In some such embodiments, a first secondaryatom can include an element that has a relatively low solubility withthe primary atom. In embodiments where the primary atom is gold, thesecondary atoms listed in the preceding paragraph can be utilized inthis embodiment. The second secondary atom in such an embodiment mayhave a relatively high solubility in the primary atom (e.g., gold) sothat the second secondary atoms are distributed uniformly in the grainsof the primary atoms. This may serve to prevent the primary atoms fromleaving the grain. This could then eliminate the source of free goldatoms and block the diffusion of gold atoms through defects such asdislocations, interfaces, surfaces, grain boundaries, twin boundaries,or combinations thereof. In some such embodiments, the second secondaryatom can be indium (In), tin (Sn), hafnium (Hf), niobium (Nb), manganese(Mn), or some combination thereof, for example. In some suchembodiments, the second secondary atom can be erbium (Er), scandium(Sc), zinc (Zn), or some combination thereof, for example. In some suchembodiments, the second secondary atom can be indium (In), tin (Sn),hafnium (Hf), niobium (Nb), manganese (Mn), erbium (Er), scandium (Sc),zinc (Zn), or some combination thereof, for example. In someembodiments, the second secondary atoms can be silver (Ag), copper (Cu),magnesium (Mg), palladium (Pd), vanadium (V), zinc (Zn), chromium (Cr),iron (Fe), lithium (Li), nickel (Ni), platinum (Pt), scandium (Sc), orsome combination thereof, for example. It should also be noted that theatoms noted as second secondary atoms can also be used in combinationwith a primary material without the first secondary atom, e.g., a NFTcan include only a primary material and a secondary material from theabove noted second secondary atoms.

In some embodiments, secondary atom(s) can be chosen based on theiratomic radii. In some embodiments, secondary atom(s) can be those thathave larger atomic radii than the primary atom so that the secondaryatom(s) have a low diffusion rate into the primary metal. Table 2 showsthe atomic radii of a number of atoms.

TABLE 2 Sym- Atomic Sym- Atomic Sym- Atomic Sym- Atomic bol radius bolradius bol radius bol radius H 0.046 Pd 0.137 Cr 0.125 Ho 0.176 Li 0.152Ag 0.144 Mn 0.112 Er 0.175 Be 0.114 Cd 0.15 Fe 0.124 Tm 0.174 Be 0.097In 0.157 Co 0.125 Yb 0.193 C 0.077 Sn 0.158 Ni 0.125 Lu 0.173 N 0.071 Sb0.161 Cu 0.128 Hf 0.159 O 0.06 Te 0.143 Zn 0.133 Ta 0.147 Na 0.186 In0.136 Ga 0.135 W 0.137 Mg 0.16 Cs 0.265 Ge 0.122 Re 0.138 Al 0.143 Ba0.217 As 0.125 Os 0.135 Si 0.117 La 0.187 Se 0.116 Jr 0.135 P 0.109 Ce0.182 Rb 0.251 Pt 0.138 S 0.106 Pr 0.183 Sr 0.215 Au 0.144 Cl 0.107 Nd0.182 Y 0.181 Hg 0.15 K 0.231 Sm 0.181 Zr 0.158 Tl 0.171 Ca 0.197 Eu0.204 Nb 0.143 Pb 0.175 Sc 0.16 Gd 0.18 Mo 0.136 Bi 0.182 Ti 0.147 Tb0.177 Ru 0.134 Th 0.18 V 0.132 Dy 0.177 Rh 0.134 U 0.138

In some embodiments, the secondary atom(s) can be bismuth (Bi), indium(In), tin (Sn), hafnium (Hf), niobium (Nb), antimony (Sb), tellurium(Te), or some combination thereof, for example. In some embodiments, thesecondary atom(s) can be erbium (Er), holmium (Ho), lutetium (Lu),praseodymium (Pr), scandium (Sc), or some combination thereof, forexample. In some embodiments, the secondary atom(s) can be barium (Ba),cesium (Cs), dysprosium (Dy), europium (Eu), gadolinium (Gd), samarium(Sm), terbium (Tb), thallium (Th), or some combination thereof, forexample.

In some embodiments, two secondary atoms can be utilized, a firstsecondary atom that has a low solubility in the primary atom and asecond secondary atoms that has a high solubility in gold. In suchembodiments, the first secondary atom (that have a low solubility in theprimary atom) may reduce the diffusion of the primary atoms throughdefects, such as dislocations and grain boundaries, and the secondsecondary atoms (that have a high solubility in the primary atom) mayreduce the diffusion of the primary atoms through lattice andsurface/interface interactions.

In some embodiments, the first secondary atom (that has a low solubilityin the primary atom) may be boron (B), bismuth (Bi), sulfur (S), silicon(Si), carbon (C), antimony (Sb), tellurium (Te), or combinationsthereof, for example. In some embodiments, the first secondary atom canbe boron (B), bismuth (Bi), sulfur (S), silicon (Si), tellurium (Te), orcombinations thereof, for example. In some embodiments, the firstsecondary atom can be holmium (Ho), lutetium (Lu), praseodymium (Pr),uranium (U), or combinations thereof, for example. In some embodiments,the first secondary atom can be cesium (Cs), dysprosium (Dy), europium(Eu), gadolinium (Gd), germanium (Ge), rubidium (Rb), selenium (Se),samarium (Sm), terbium (Tb), thallium (Th), or combinations thereof, forexample. In some embodiments, the first secondary atom can be cesium(Cs), dysprosium (Dy), europium (Eu), germanium (Ge), rubidium (Rb),selenium (Se), terbium (Tb), or combinations thereof, for example. Insome embodiments, the first secondary atom can be boron (B), bismuth(Bi), sulfur (S), silicon (Si), carbon (C), antimony (Sb), tellurium(Te), holmium (Ho), lutetium (Lu), praseodymium (Pr), uranium (U),cesium (Cs), dysprosium (Ds), europium (Eu), gadolinium (Gd), germanium(Ge), rubidium (Rb), selenium (Se), samarium (Sm), terbium (Tb),thallium (Th), or combinations thereof, for example.

In some embodiments, the second secondary atom can be indium (In), tin(Sn), hafnium (Hf), niobium (Nb), manganese (Mn), or some combinationthereof, for example. In some such embodiments, the second secondaryatom can be erbium (Er), scandium (Sc), zinc (Zn), or some combinationthereof, for example. In some such embodiments, the second secondaryatom can be indium (In), tin (Sn), hafnium (Hf), niobium (Nb), manganese(Mn), erbium (Er), scandium (Sc), zinc (Zn), or some combinationthereof, for example. In some embodiments, the second secondary atom canbe silver (Ag), copper (Cu), magnesium (Mg), palladium (Pd), vanadium(V), zinc (Zn), aluminum (Al), chromium (Cr), iron (Fe), nickel (Ni),lithium (Li), platinum (Pt), scandium (Sc), tantalum (Ta), or somecombination thereof, for example.

In some embodiments, a NFT can also include a third secondary atom. Insome embodiments, the third secondary atom can be one where the bondenergy/strength of the third secondary atom-third secondary atom bond isless than that of the third secondary atom-primary atom bond so that thethird secondary atom tends to bond to the primary atom instead of otherthird secondary atoms. As a result, the third secondary atoms may besubstantially uniformly distributed in the primary atoms, which canincrease the obstruction efficiency of the third secondary atoms.

In some embodiments, the secondary atom(s) can also be chosen byconsidering optical properties of the atoms or a material that includesthe atoms (e.g., an alloy containing the primary atom and the secondaryatom(s)). In some embodiments, atoms useful in a NFT can have opticalproperties that enable efficient coupling of incident light to thesurface plasmons and effective energy transfer to the magnetic medium.The optical properties of NFT materials are often characterized by theiroptical refractive index (n) and extinction coefficient (k) which can bemeasured by ellipsometry. From the n and k values, the real andimaginary part of the dielectric constant (permittivity) can becalculated by: ε₁=n²−k² and ε₂=2nk. The plasmonic effect arises from thenegative real part of the dielectric constant of the material. Thestrength of plasmonic coupling depends on the absolute value of ε₁. Onthe other hand, the surface plasmon mode needs to propagate over asubstantial distance. The loss of this propagation is proportional tothe imaginary part of the dielectric ε₂. A good plasmonic material willhave high |ε₁| and low ε₂. Hence a figure-of-merit (FOM) has beendeveloped to characterize the “goodness” of plasmonic materials:FOM=3*|ε₁/ε₂|.

The near field transducers described above can be fabricated using avariety of techniques, including for example: sputtering from an alloytarget; co-sputtering from multiple targets; reactive sputtering from analloy target; reactive co-sputtering from multiple targets;co-evaporation from multiple sources; reactive co-evaporation frommultiple sources; ion beam deposition from an alloy target; codepositionin electrochemical ways, including electroless deposition,electrodeposition, displacement reaction, chemical reduction, orelectrophoretic deposition.

In some embodiments, secondary atom(s) can be chosen based on otherconsiderations. For example, secondary atom(s) can be chosen based onmechanistic considerations involved in pinning grain growth. The NFTgrain and interface boundary can be atomically engineered by thepreferential adsorption of secondary atom(s) in order to pin the grainboundary and improve the grain boundary migration resistance of a NFTthat includes, a primary atoms, such as gold for example. This can alsobe described as utilizing minor alloying elements (e.g., secondaryatom(s)) to alter the fundamental grain boundary migration kinetics ofthe primary atom (e.g., gold). Mechanical high temperature reliabilityof the NFT may therefore be improved by intentional microalloyingadditions of one or more secondary atom(s) into the NFT material. Suchintentional alloying can pin the grain boundary movement by the socalled “solute drag” effect, making it harder for the peg to recess.

Disclosed concepts may provide stable NFT element dimensions duringoperating temperatures by pinning grain growth. This concept utilizesthe preferential placement of secondary atoms at the grain boundaries ofthe NFT material to pin grain movement. The secondary atoms are chosensuch that the total strain energy and total chemical potential energy ofthe system of atoms is reduced when they are at the grain boundary. Thusthe grain boundary secondary atom is in a potential “well” and therefore“locks” the movement of the grain boundary.

The preferential placement of secondary atoms can be accomplished byfacilitating the movement of secondary atoms to the grain boundaries.Such secondary atoms may be able to stabilize the NFT against graingrowth through the following mechanisms: increased drag force on themoving grain boundary due to the binding chemical potential and elasticstrain interaction of secondary atom to the grain boundary; reduction ofgrain boundary diffusion by poisoning of the primary atom (e.g., gold)grain boundary by the tightly adsorbed secondary atoms blocking of thediffusion jump sites at the boundary by the secondary atoms; reductionof the efficiency of secondary atom transfer across the grain boundaryby the secondary atom; change in the grain boundary structure broughtabout by the secondary atom; preferential formation of vacancy-secondaryatom pairs and secondary atom-primary atom pairs at the grain boundarywhich make boundary migration harder; improving the grain boundarycohesion; or some combination thereof.

The selection of the secondary atom can be based, at least in part onconsiderations involving the energetics of segregation of the secondaryatom to the grain boundary. One consideration is the size of thesecondary atom. In some embodiments the size of the secondary atom canbe less than the size of the primary atom. If such a relationship existsthe secondary atom can occupy interstitial positions in the bulk and atthe grain boundary. In a face centered cubic (FCC) structure, theoctahedral site is the largest interstitial site. FIG. 5 shows the totalenergies of the grain boundary with the boron atom in the bulkinterstitial site and in the grain boundary hollow site with respect toexpansion distances of the cell. By comparing the energetics of a grainboundary with a boron atom in the interstitial site, a grain boundarywith hollow sites, and a pure aluminum grain boundary it can be seenthat the boron atom does not expand the grain boundary hollow site. Infact the boron atom fits neatly into the grain boundary. The segregationenergy is the difference in the total energy of the system with theboron atom in the grain boundary hollow site and the total energy of thegrain boundary system with the boron atom in the bulk interstitial site.The driving force between the bulk and the grain boundary configurationis, in effect segregation energy. A negative segregation energy wouldenhance the grain boundary cohesion.

The same basic mechanism allows the secondary atom to poison the grainboundary/surface diffusivity. Secondary atoms having smaller radii maybe more amenable to providing this effect. Grain boundary precipitantsmay also be formed based on the energetics of the system. From aconsideration of this effect, boron (B), carbon (C), nitrogen (N),oxygen (O), or some combination thereof may be useful as a secondaryatom(s).

It should be understood, having read this disclosure, that grainboundaries as discussed herein include high angle and low angle grainboundaries, coherent and incoherent boundaries, tilt and twistboundaries, intergranular phases as well as high symmetry boundariessuch as twin boundaries.

An important consequence of these considerations is that NFTs withoutsecondary atom(s) will have higher grain boundary mobilities and lowerstabilities. Thus NFTs as typically formulated will have lowerresistance to grain boundary movement since, by definition, they do nothave secondary atoms in the system that can preferentially locate to thegrain boundary. They will therefore possess undesirable grain migrationand reliability performance.

In contrast, disclosed NFTs can utilize a secondary atom(s) to pin thegrain boundary. A secondary atom(s) present even at a few 10s or 100s ofppm may make a dramatic impact in curtailing the mobility of the grainboundaries. Secondary atom(s) which reduce the strain energy andchemical potential at the grain boundary may lead to preferentialclustering of secondary atoms near the grain boundaries (called Cottrellatmospheres) which may provide locking mechanisms that impede grainboundary movement. It should be emphasized that the primary function ofthe secondary atom(s) is grain boundary mobility impairment, althoughother functions such as solid solution strengthening are also possible.

A secondary atom can be chosen based, at least in part, on the abilityfor preferential segregation of the secondary atom (solute atom) to thegrain boundary. The secondary atom(s) preferentially bond to the grainboundary because of the lowering of the energy at the grain boundary.The choice of solute atom is thus governed by the Grain BoundarySegregation energy, which is the lowering of the system energy due toreduction of the elastic misfit strain energy and the electronic(valence) interaction energy. The choice of secondary atoms can be aidedby the use of DFT computations, as well as electronegativity and atomicelastic strain field energy calculations.

Faster secondary atoms may lead to better pinning of the grain boundary.It is also understood that a combination of more than one secondary atommay lead to better pinning of the grain boundary due to efficientboundary interstitial site filling (space-fill efficiency) due to thecombination of varying secondary atom atomic radii. This is analogous toachieving better space filling when a mixture of different sized ballsis used rather than a single sized ball.

A possible advantage of utilizing the solute drag method of grainboundary stabilization is that very low concentrations of secondaryatoms, compared to solid solution strengthening or precipitationhardening, is needed. This in turn minimizes the impact of themodification on the plasmonic properties. Larger grain sizes possesssmaller grain boundary area, and therefore require lower amounts ofsolute phase to percolate the boundary. In fact, only several hundredppm of secondary atom (dopant) concentration may produce a 3 to 4 orderof magnitude change in the grain boundary mobility. Initially the grainboundaries are pinned to the secondary atom atmospheres therebyimmobilizing them. As the temperature is raised, the secondary atomsgain vibrational energy. The boundary then has an increasing tendency todecouple from the solute atoms pinning it. At a certain temperature, theboundary breaks away from the secondary atoms surrounding it. Thebreakaway temperature of the grain boundary is related to theconcentration of secondary atoms at the boundary. Higher secondary atomconcentrations at the boundary lead to higher break away temperatures.The NFT operating temperature will thus be dependent on the secondaryatom concentration as shown schematically in FIG. 6.

FIG. 7 shows the solute segregation enthalpy of various atoms andindicates that atoms such as boron (B), and carbon (C); scandium (Sc);thallium (Th); and combinations thereof may be useful. Such atoms mayhave a higher propensity to grain boundary segregation and solute dragstabilization. As a general rule, elements with misfit energies (grainboundary solute segregation energies) higher than 12.5 kJ/mol will tendto easily segregate to the grain boundary. Therefore all the elementswith segregation energies above the dashed lines can be consideredcandidates for alloying elements for solute drag strengthening of the AuNFT. Such elements can include, for example sodium (Na), strontium (Sr),calcium (Ca), yttrium (Y), thorium (Th), antimony (Sb), thallium (Tl),boron (B), scandium (Sc), carbon (C), beryllium (Be), lutetium (Lu),thulium (Tm), erbium (Er), holmium (Ho), dysprosium (Dy), ytterbium(Yb), terbium (Tb), gadolinium (Gd), samarium (Sm), phosphorus (P),sulfur (S), promethium (Pm), neodymium (Nd), nickel (Ni), cobalt (Co),cerium (Ce), lanthanum (La), praseodymium (Pr), iron (Fe), and copper(Cu) for example. Elements included in FIG. 7 that have misfit energiesless than 12.5 kJ/mol include europium (Eu), germanium (Ge), hafnium(Hf), cadmium (Cd), manganese (Mn), silicon (Si), barium (Ba), potassium(K), and rubidium (Rb).

In some embodiments, the amount of the secondary atom can be not lessthan 10 ppm (0.001 at %), or in some embodiments not less than 100 ppm(0.01 at %). In some embodiments, the amount of the secondary atom canbe not greater than 100 pm (0.01 at %), in some embodiments not greaterthan 5 at %, or in some embodiments not greater than 10 at %.

In some embodiments, solute drag stabilization (or solute pinning) canbe accomplished by carrying out the following steps prior to operatingthe NFT: (1) incorporation of one or more secondary atoms to the primaryatom lattice; and (2) driving of the secondary atoms from the graininterior to the grain boundary through a suitably chosentemperature-time schedule. In some embodiments, secondary atoms that areadded based on the solute drag mechanistic approach can be introducedthrough implantation, vacuum deposition, carburizing, nitridization,electrodeposition, incorporation through seed layers, or othertechniques for example. Alternatively, secondary atom(s) may beintroduced into the NFT by a variety of other methods. For example, thesecondary atom(s) could be incorporated in the target materialcompositions which are deposited or co-deposited. Alternatively,secondary atom(s) could be incorporated into the NFT by ionimplantation, by diffusion from or through the seed layer underneath.

Annealing can also optionally be included. The annealing schedule can bechosen so as to initially drive the secondary atoms from the graininterior to the grain boundary. The annealing temperature may help inthe preferential segregation of the secondary atoms to the grainboundaries. Therefore, exposure of the NFT to heat during the annealingand operating temperature strengthens, rather than weakens the NFTalloy.

The method can be applicable to wafer and slider processing. Secondaryatoms can be introduced at wafer (or slider) level for NFTs. Theaddition of secondary atom(s) can be advantageously combined withannealing to further improve NFT strength.

A particular illustrative example of a process sequence forimplementation of the solute drag stabilization can include thefollowing: deposit a gold film of the required thickness on a wafer (orslider bar); implant a carefully chosen species which lowers the totalsystem energy at the grain boundary; for example, metals, metalloids, B,C, N, (O) at concentrations from about 100 ppm to 100000 ppm; implantconditions (temperature, voltage, dose, current) can be chosen andcalculated so as to confine the implanted species (solute) in thethickness of the film; the wafer can be heated or cooled during theduration of the implant; the implant can be a line beam implanter, or itcan be a Plasma immersion implanter, the implant can be a line of sight,or it can be in a retrograde profile; the implanted species can beimplanted by itself, or it can be preceded or followed up by anotherco-implanted species which serves to control the degree ofcrystallinity, the dopant profile before and after the implant, the coimplant can be a substitutional or an interstitial species, in someembodiments a substitutional species; a thermal activation anneal canthen drive implant species to grain boundary from the grain interior,the time-temperature schedule can be carefully chosen; and the dose ofthe implant is chosen such that the penalty in n and k should beminimal.

The implementation of the solute dopant step can be preceded or followedby appropriate laser, furnace, spike or RTA processes. The aim of suchprocesses are to advantageously modify and control the grain structure,point, line and volume defects of the gold for optimal reliabilityperformance. These include vacancies, clusters, grain size, degree ofcrystallinity or amorphousness, twin and stacking fault density, grainboundary intergranular phases, etc. The annealing can be solid stateannealing or epitaxy, or it can be liquid phase annealing or epitaxy.

It should be understood that the implantation and annealing steps can becarried out at sheet film of a plasmonic metal or a suitably chosenbinary or ternary plasmonic alloy at wafer or bar level. It can also becombined with wafer or slider based patterning methods which can serveto selectively dope the solute atoms in only the needed regions of thewafer (slider) while protecting the other regions. Implementing such aprocess at the bar level may reduce the risk of damage to the opticallayers of the NFT device from the implanted beam. An added benefit ofsuch an implantation scheme is that there is no degradation inmechanical strength due to implant. Possible interfacial strengthenhancements due to intentional mixing at interface are also possible.

Alternate methods of doping interstitials and solute atoms are alsopossible. For example, e-beam heating of the NFT film will lead toincorporation of carbon atoms. Likewise, the deposition of a metal layer(or carbon or boron) followed by a diffusion anneal, surfacenitridation, surface carburization are also methods of incorporation ofthe secondary atom in the lattice. Alternatively, the dopant atom can beincorporated in the seed layer and driven by diffusion into the NFTmaterial.

In some embodiments, disclosed NFTs may include a primary atom and atleast one secondary atom, regardless of the mechanistic approach whichis being relied upon as providing an effect. In some embodiments, aprimary atom can be gold (Au) and the at least one secondary atom can beselected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon(Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony(Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), forexample. In some embodiments, gold and B, Si or S can be utilized in aNFT. NFTs including gold and B, Si, S, or combinations thereof may beuseful. In some embodiments, gold and In can be utilized in a NFT. NFTsincluding gold and In may be useful. In some embodiments, gold and B, C,N, or O can be utilized in a NFT. NFTs including gold and B, C, N, or O,or combinations thereof may be useful.

In some embodiments, disclosed NFTs may include gold (Au) and at leastone of the following elements: erbium (Er), holmium (Ho), lutetium (Lu),praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn). In someembodiments, disclosed NFTs may include gold (Au) and at least one ofthe following elements: barium (Ba), chlorine (Cl), cesium (Cs),dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium(Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium(Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium(Th).

Generally, a NFT can include a primary atom and at least one secondaryatom. In some embodiments, the secondary atom(s) can have an atomicpercent (at %) that is not greater than 50 at %, in some embodiments,not greater than 30 at %, in some embodiments, not greater than 5 at %,and in some embodiments, not greater than 1 at %. In some embodiments,the second atom(s) can have an at % that is not less than 0.001 at %, insome embodiments not less than 0.01 at %, and in some embodiments notless than 0.1 at %.

While the present disclosure is not so limited, an appreciation ofvarious aspects of the disclosure will be gained through a discussion ofthe examples provided below.

EXAMPLES

All scientific and technical terms used herein have meanings commonlyused in the art unless otherwise specified. The definitions providedherein are to facilitate understanding of certain terms used frequentlyherein and are not meant to limit the scope of the present disclosure.

As used in this specification and the appended claims, “top” and“bottom” (or other terms like “upper” and “lower”) are utilized strictlyfor relative descriptions and do not imply any overall orientation ofthe article in which the described element is located.

As used in this specification and the appended claims, the singularforms “a”, “an”, and “the” encompass embodiments having pluralreferents, unless the content clearly dictates otherwise.

As used in this specification and the appended claims, the term “or” isgenerally employed in its sense including “and/or” unless the contentclearly dictates otherwise. The term “and/or” means one or all of thelisted elements or a combination of any two or more of the listedelements.

As used herein, “have”, “having”, “include”, “including”, “comprise”,“comprising” or the like are used in their open ended sense, andgenerally mean “including, but not limited to”. It will be understoodthat “consisting essentially of”, “consisting of”, and the like aresubsumed in “comprising” and the like. For example, a conductive tracethat “comprises” silver may be a conductive trace that “consists of”silver or that “consists essentially of” silver.

As used herein, “consisting essentially of,” as it relates to acomposition, apparatus, system, method or the like, means that thecomponents of the composition, apparatus, system, method or the like arelimited to the enumerated components and any other components that donot materially affect the basic and novel characteristic(s) of thecomposition, apparatus, system, method or the like.

The words “preferred” and “preferably” refer to embodiments that mayafford certain benefits, under certain circumstances. However, otherembodiments may also be preferred, under the same or othercircumstances. Furthermore, the recitation of one or more preferredembodiments does not imply that other embodiments are not useful, and isnot intended to exclude other embodiments from the scope of thedisclosure, including the claims.

Also herein, the recitations of numerical ranges by endpoints includeall numbers subsumed within that range (e.g., 1 to 5 includes 1, 1.5, 2,2.75, 3, 3.80, 4, 5, etc. or 10 or less includes 10, 9.4, 7.6, 5, 4.3,2.9, 1.62, 0.3, etc.). Where a range of values is “up to” a particularvalue, that value is included within the range.

Use of “first,” “second,” etc. in the description above and the claimsthat follow is not intended to necessarily indicate that the enumeratednumber of objects are present. For example, a “second” substrate ismerely intended to differentiate from another infusion device (such as a“first” substrate). Use of “first,” “second,” etc. in the descriptionabove and the claims that follow is also not necessarily intended toindicate that one comes earlier in time than the other.

Thus, embodiments of materials for near field transducers and near fieldtransducers containing the same are disclosed. The implementationsdescribed above and other implementations are within the scope of thefollowing claims. One skilled in the art will appreciate that thepresent disclosure can be practiced with embodiments other than thosedisclosed. The disclosed embodiments are presented for purposes ofillustration and not limitation.

What is claimed is:
 1. A device comprising: a near field transducer, thenear field transducer comprising gold (Au) and at least one othersecondary atom present in an amount from 0.01 atomic percent to about 5atomic percent, the at least one other secondary atom selected from:boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin(Sn), manganese (Mn), tellurium (Te), carbon (C), nitrogen (N), andoxygen (O), and combinations thereof; erbium (Er), holmium (Ho),lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn),and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs),dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium(Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium(Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium(Th), and combinations thereof.
 2. The device according to claim 1,wherein the at least one secondary atom is selected from: boron (B),bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese(Mn), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), andcombinations thereof.
 3. The device according to claim 1, wherein the atleast one secondary atom is selected from: boron (B), bismuth (Bi),sulfur (S), silicon (Si), indium (In), or combinations thereof.
 4. Thedevice according to claim 1, wherein the at least one secondary atom isselected from: boron (B), sulfur (S), silicon (Si), or combinationsthereof.
 5. The device according to claim 1, wherein the at least onesecondary atom is selected from indium (In).
 6. The device according toclaim 1, wherein the near field transducer comprises at least twosecondary atoms.
 7. The device according to claim 6, wherein a firstsecondary atom is selected from: boron (B), bismuth (Bi), sulfur (S),silicon (Si), carbon (C), tellurium (Te), or combinations thereof,holmium (Ho), lutetium (Lu), praseodymium (Pr), uranium (U), orcombinations thereof; and cesium (Cs), dysprosium (Dy), europium (Eu),gadolinium (Gd), germanium (Ge), rubidium (Rb), selenium (Se), samarium(Sm), terbium (Tb), thallium (Th), or combinations thereof; and a secondsecondary atom is selected from: indium (In), tin (Sn), manganese (Mn),or some combination thereof; and erbium (Er), scandium (Sc), zinc (Zn),or some combination thereof.
 8. The device according to claim 1, whereinthe near field transducer comprises about 0.1 atomic percent to about 5atomic percent of the at least one secondary atom.
 9. The deviceaccording to claim 1 further comprising an energy source.
 10. A devicecomprising: a light source; a waveguide; and a near field transducer,the near field transducer comprising gold (Au) and at least one othersecondary atom present in an amount from 0.01 atomic percent to about 5atomic percent, the at least one other secondary atom selected from:boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin(Sn), manganese (Mn), tellurium (Te), carbon (C), nitrogen (N), andoxygen (O), and combinations thereof; erbium (Er), holmium (Ho),lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn),and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs),dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium(Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium(Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium(Th), and combinations thereof, wherein the light source, waveguide andnear field transducer are configured to transmit light from the lightsource to the waveguide and finally the near field transducer.
 11. Thedevice according to claim 10, wherein the at least one secondary atom isselected from: boron (B), bismuth (Bi), sulfur (S), silicon (Si), indium(In), or combinations thereof.
 12. The device according to claim 10,wherein the at least one secondary atom is selected from: boron (B),sulfur (S), silicon (Si), or combinations thereof.
 13. The deviceaccording to claim 10, wherein the at least one secondary atom isselected from indium (In).
 14. The device according to claim 10, whereinthe near field transducer comprises at least two secondary atoms. 15.The device according to claim 14, wherein a first secondary atom isselected from: boron (B), bismuth (Bi), sulfur (S), silicon (Si), carbon(C), tellurium (Te), or combinations thereof, holmium (Ho), lutetium(Lu), praseodymium (Pr), uranium (U), or combinations thereof; andcesium (Cs), dysprosium (Dy), europium (Eu), gadolinium (Gd), germanium(Ge), rubidium (Rb), selenium (Se), samarium (Sm), terbium (Tb),thallium (Th), or combinations thereof; and a second secondary atom isselected from: indium (In), tin (Sn), manganese (Mn), or somecombination thereof; and erbium (Er), scandium (Sc), zinc (Zn), or somecombination thereof.
 16. The device according to claim 10, wherein thenear field transducer comprises about 0.1 atomic percent to about 5atomic percent of the at least one secondary atom.
 17. A disc drivecomprising: at least one actuator arm having a first and a second end;at least one head, wherein each arm has a head at the first end thereofand wherein each head comprises: a light source; a near fieldtransducer, the near field transducer comprising gold (Au) and at leastone other secondary atom present in an amount from 0.01 atomic percentto about 5 atomic percent, the at least one other secondary atomselected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon(Si), tin (Sn), manganese (Mn), tellurium (Te), carbon (C), nitrogen(N), and oxygen (O), and combinations thereof; erbium (Er), holmium(Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc(Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium(Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd),germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P),rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb),thallium (Th), and combinations thereof; a magnetic reader; and amagnetic writer, wherein the light source and the near field transducerare configured to transmit light from the light source to the near fieldtransducer in order to assist the magnetic writer with writing.
 18. Thedisc drive according to claim 17, wherein the at least one secondaryatom is selected from: boron (B), bismuth (Bi), sulfur (S), silicon(Si), indium (In), or combinations thereof.
 19. The disc drive accordingto claim 17, wherein the near field transducer comprises about 0.1atomic percent to about 5 atomic percent of the at least one secondaryatom.